Strong suppression of spin generation at a Fano resonance in a semiconductor nanostructure
2012 (English)Manuscript (preprint) (Other academic)
We observe remarkable, complete suppression of spin generation under optical excitation in a thin InAs/GaAs wetting layer close to the light-hole excitonic resonance, leading to zero electron spin polarization as monitored by adjacent InAs quantum dots. The suppression is attributed to efficient spin relaxation/scattering at the Fano resonance between the light-hole exciton states and the heavy-hole continuum of the wetting layer. The complete suppression is found to remain effective up to temperatures exceeding 100 K.
Place, publisher, year, edition, pages
Quantum Wells, Excitons, Spin Relaxation, Fano resonance
Natural Sciences Condensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-74674OAI: oai:DiVA.org:liu-74674DiVA: diva2:490050