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Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study
Linköping University, Department of Physics, Chemistry and Biology, Functional Electronic Materials. Linköping University, The Institute of Technology.
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine .
Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, Ukraine .
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China .
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2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 023501Article in journal (Refereed) Published
Abstract [en]

Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogenation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial (Ga-i) atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga-i-related defects present in the as-grown material. A possible mechanism responsible for the observed difference in the H behavior in GaNP and GaNAs is discussed.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2012. Vol. 111, no 023501
National Category
Natural Sciences Condensed Matter Physics
Identifiers
URN: urn:nbn:se:liu:diva-74675DOI: 10.1063/1.3676576ISI: 000299792400013OAI: oai:DiVA.org:liu-74675DiVA: diva2:490064
Note
funding agencies|Swedish Research Council| 621-2010-3815 |Swedish Institute||Available from: 2012-02-03 Created: 2012-02-03 Last updated: 2017-12-08

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Dagnelund, DanielChen, WeiminBuyanova, Irina

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