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Fully dense, non-faceted 111-textured high power impulse magnetron sputtering TiN films grown in the absence of substrate heating and bias
Technical University Darmstadt & Karlsruhe Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Plasma and Coating Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-1744-7322
Department of Materials Science, University of Illinois, Urbana, Illinois, USA.
2010 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 518, no 21, 5978-5980 p.Article in journal, Letter (Refereed) Published
Abstract [en]

We demonstrate the deposition of fully dense, stoichiometric TiN films on amorphous SiO2 by reactive high power impulse magnetron sputtering (HiPIMS) in the absence of both substrate heating and applied bias. Contrary to the highly underdense layers obtained by reactive dc magnetron sputtering (dcMS) under similar conditions, the film nanostructure exhibits neither intra- nor intergrain porosity, exhibiting a strong 111 preferred orientation with flat surfaces. Competitive grain growth occurs only during the early stages of deposition 100 nm). The strong differences in the kinetically-limited nanostructural evolution for HiPIMS vs. dcMS are explained by high real-time deposition rates with long relaxation times, high ionization probabilities for Ti, and broad ion energy distributions.

Place, publisher, year, edition, pages
Elsevier, 2010. Vol. 518, no 21, 5978-5980 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-74698DOI: 10.1016/j.tsf.2010.05.064ISI: 000280989100018OAI: oai:DiVA.org:liu-74698DiVA: diva2:490418
Available from: 2012-02-05 Created: 2012-02-05 Last updated: 2017-12-08Bibliographically approved

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Helmersson, Ulf

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  • apa
  • harvard1
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  • vancouver
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