Morphology of TiN thin films grown on SiO(2) by reactive high power impulse magnetron sputtering
2011 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 520, no 5, 1621-1624 p.Article in journal (Refereed) Published
Thin TiN films were grown on SiO(2) by reactive high power impulse magnetron sputtering (HiPIMS) at a range of temperatures from 45 to 600 degrees C. The film properties were compared to films grown by conventional dc magnetron sputtering (dcMS) at similar conditions. Structural characterization was carried out using X-ray diffraction and reflection methods. The HiPIMS process produces denser films at lower growth temperature than does dcMS. Furthermore, the surface is much smoother for films grown by the HiPIMS process. The  grain size increases monotonically with increased growth temperature, whereas the size of the  oriented grains decreases to a minimum for a growth temperature of 400 degrees C after which it starts to increase with growth temperature. The  crystallites are smaller than the  crystallites for all growth temperatures. The grain sizes of both orientations are smaller in HiPIMS grown films than in dcMS grown films.
Place, publisher, year, edition, pages
Elsevier , 2011. Vol. 520, no 5, 1621-1624 p.
Titanium nitride, High power impulse magnetron sputtering, Ion-assisted deposition, Thin films
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-74859DOI: 10.1016/j.tsf.2011.07.041ISI: 000299233000048OAI: oai:DiVA.org:liu-74859DiVA: diva2:496538
Funding Agencies|University of Iceland|072105003|2012-02-102012-02-102012-02-15