liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Fluorescent SiC as a new material for white LEDs
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
University of Erlangen-Nürnberg, Erlangen, Germany .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Vilnius University, Lithuania.
Show others and affiliations
2012 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T148, 014002- p.Article in journal (Refereed) Published
Abstract [en]

Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.

Place, publisher, year, edition, pages
2012. Vol. T148, 014002- p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-76117DOI: 10.1088/0031-8949/2012/T148/014002ISI: 000302216000003OAI: oai:DiVA.org:liu-76117DiVA: diva2:512473
Note

funding agencies|Angpanneforeningen Research Foundation||Richerts Foundation||Swedish Energy Agency||Nordic Energy Research||Swedish Research Council| 2009-5307 |Danish Council for Strategic Research| 09-072118 |German Ministry of Education and Research (Federal Ministry of Education and Research)| 03SF0393 |

Available from: 2012-03-27 Created: 2012-03-27 Last updated: 2017-12-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Syväjärvi, MikaelSun, JianwuJokubavicius, ValdasHens, PhilipLiljedahl, Rickard

Search in DiVA

By author/editor
Syväjärvi, MikaelSun, JianwuJokubavicius, ValdasHens, PhilipLiljedahl, Rickard
By organisation
Semiconductor MaterialsThe Institute of TechnologyDepartment of Physics, Chemistry and Biology
In the same journal
Physica scripta. T
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 120 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf