Fluorescent SiC as a new material for white LEDs
2012 (English)In: Physica scripta. T, ISSN 0281-1847, Vol. T148, 014002- p.Article in journal (Refereed) Published
Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
Place, publisher, year, edition, pages
2012. Vol. T148, 014002- p.
IdentifiersURN: urn:nbn:se:liu:diva-76117DOI: 10.1088/0031-8949/2012/T148/014002ISI: 000302216000003OAI: oai:DiVA.org:liu-76117DiVA: diva2:512473
funding agencies|Angpanneforeningen Research Foundation||Richerts Foundation||Swedish Energy Agency||Nordic Energy Research||Swedish Research Council| 2009-5307 |Danish Council for Strategic Research| 09-072118 |German Ministry of Education and Research (Federal Ministry of Education and Research)| 03SF0393 |2012-03-272012-03-272013-05-07