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Characterization of donor–acceptor-pair emission in fluorescent 6H-SiC
Technical University of Denmark, Lyngby.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Royal Institute of Technology, Kista, Sweden .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Physica Scripta, ISSN 0031-8949, E-ISSN 1402-4896, Vol. T148, 014003- p.Article in journal (Refereed) Published
Abstract [en]

We investigated donor–acceptor-pair emission in N–B-doped 6H-SiC samples by using photoluminescence (PL) and angle-resolved PL. It is shown that n-type doping with concentrations larger than 1018 cm−3 is favorable for observing luminescence, and increasing nitrogen results in stronger luminescence. A dopant concentration difference greater than 4×1018 cm−3 is proposed to help achieve intense PL. Angular-dependent PL was observed that was attributed to the Fabry–Pérot microcavity interference effect, and a strong luminescence intensity in a large emission angle range was also achieved. The results indicate that N–B-doped fluorescent SiC is a good wavelength converter in white LED applications.

Place, publisher, year, edition, pages
Institute of Physics Publishing Ltd , 2012. Vol. T148, 014003- p.
Keyword [en]
Fluorescent SiC, photoluminescence
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-76121DOI: 10.1088/0031-8949/2012/T148/014003ISI: 000302216000004OAI: oai:DiVA.org:liu-76121DiVA: diva2:512512
Note

funding agencies|Danish Council for Strategic Research| 09-072118 |Swedish Energy Agency||Nordic Energy Research||Swedish Research Council| 2009-5307 |New Energy and Industrial Technology Development Organization||

Available from: 2012-03-28 Created: 2012-03-28 Last updated: 2017-12-07

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Jokubavicius, ValdasYakimova, RositzaSyväjärvi, Mikael

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