Polytype transformation and structural characteristics of 3C-SiC on 6H-SiC substrates
2014 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 395, 109-115 p.Article in journal (Refereed) Published
The 3C-SiC (111) was grown on on-axis 6H-SiC substrates in a temperature interval ranging from 1675oC where 3C-SiC nucleated, to 1825oC where coverage of the substrate by 3C-SiC was nearly 100%. The 6H- to 3C-SiC transformation was not abrupt and two different transitions could be observed. The first one occurs before or during 3C-SiC nucleation and consists of 6H-, 3C-, 15R-SiC and other unresolved stacking sequences. The second one appears due to 6H-SiC and 3C-SiC competition during the growth and results in non flat needle-like interface. A proposed model elucidates connection between four-fold twins nucleating at the 6H-/3C-SiC interface and the formation of depressions at the surface of the 3C-SiC layer.
Place, publisher, year, edition, pages
2014. Vol. 395, 109-115 p.
Nucleation; Characterization; Crystal structure; Vapor phase cpitaxy; Cubic silicon carbide
IdentifiersURN: urn:nbn:se:liu:diva-76364DOI: 10.1016/j.jcrysgro.2014.03.021ISI: 000335906000019OAI: oai:DiVA.org:liu-76364DiVA: diva2:514114