Impact of extended defects on Hall and magnetoresistivity effects in cubic silicon carbide
2012 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 45, no 22, 225102- p.Article in journal (Refereed) Published
From magnetoresistivity effect measurements the carrier mobility at room- temperature is 200 cm2/Vs in heteroepitaxially grown 3C-SiC on 6H-SiC by sublimation epitaxy. The main scattering mechanisms are found to be scattering by neutral impurities at low temperature and by phonons at higher temperature. The carrier concentration is in the range of 1016 cm-3, which corresponds to the concentration of residual doping by nitrogen acquired from photoluminescence measurements. Using magnetoresistance and Hall mobility data we have created a simple model which quantifies the volume of the samples influenced by extended defects. A higher doping near extended defects is either not present in the samples or might be screened by the electrostatic field created by these defects.
Place, publisher, year, edition, pages
Institute of Physics (IOP), 2012. Vol. 45, no 22, 225102- p.
IdentifiersURN: urn:nbn:se:liu:diva-76365DOI: 10.1088/0022-3727/45/22/225102ISI: 000305175100004OAI: oai:DiVA.org:liu-76365DiVA: diva2:514118