Growth of quality graphene on cubic silicon carbide
(English)Manuscript (preprint) (Other academic)
The growth of epitaxial graphene was performed on the Si-face of 4H-SiC, 6H-SiC and 3C-SiC substrates by Si sublimation of SiC in Ar atmosphere at a temperature of 2000oC. Graphene surface morphology and thickness have been evaluated using low-energy electron microscopy (LEEM) and atomic force microscopy (AFM). Large homogeneous areas of graphene monolayers (over 50x50 μm2) have been successfully grown on 3C-SiC substrates. Differences in the morphology of graphene layers, grown on different SiC polytypes, are related to a large extent to minimization of the terrace surface energy during the step bunching process. The uniformity of Si sublimation is a decisive factor for obtaining large area homogeneous graphene. It is also shown that better quality graphene is grown on 3C-SiC substrates with smoother surface, because of less pronounced step bunching and lower distribution of step heights on polished surface.
IdentifiersURN: urn:nbn:se:liu:diva-76370OAI: oai:DiVA.org:liu-76370DiVA: diva2:514126