Spatial Control of p-n Junction in an Organic Light-Emitting Electrochemical Transistor
2012 (English)In: Journal of the American Chemical Society, ISSN 0002-7863, E-ISSN 1520-5126, Vol. 134, no 2, 901-904 p.Article in journal (Refereed) Published
Low-voltage-operating organic electrochemical light-emitting cells (LECs) and transistors (OECTs) can be realized in robust device architectures, thus enabling easy manufacturing of light sources using printing tools. In an LEC, the p-n junction, located within the organic semiconductor channel, constitutes the active light-emitting element. It is established and fixated through electrochemical p- and n-doping, which are governed by charge injection from the anode and cathode, respectively. In an OECT, the electrochemical doping level along the organic semiconducting channel is controlled via the gate electrode. Here we report the merger of these two devices: the light-emitting electrochemical transistor, in which the location of the emitting p-n junction and the current level between the anode and cathode are modulated via a gate electrode. Light emission occurs at 4 V, and the emission zone can be repeatedly moved back and forth within an interelectrode gap of 500 mu m by application of a 4 V gate bias. In transistor operation, the estimated on/off ratio ranges from 10 to 100 with a gate threshold voltage of -2.3 V and transconductance value between 1.4 and 3 mu S. This device structure opens for new experiments tunable light sources and LECs with added electronic functionality.
Place, publisher, year, edition, pages
American Chemical Society , 2012. Vol. 134, no 2, 901-904 p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-76542DOI: 10.1021/ja210936nISI: 000301084300041OAI: oai:DiVA.org:liu-76542DiVA: diva2:515120
Funding Agencies|Swedish Government||Swedish Foundation for Strategic Research (OPEN)||VINNOVA (PEA-PPP)||Tillvaxtverket||Knut and Alice Wallenberg Foundation||Onnesjo Foundation||2012-04-122012-04-112015-05-06