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Improvements in Optical Properties of (0001) ZnO Layers Grown on (0001) Sapphire Substrates by Halide Vapor Phase Epitaxy Using Thick Buffer Layers
Tokyo University of Agriculture and Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Tokyo University of Agriculture and Technology.
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2012 (English)In: Japanese Journal of Applied Physics, ISSN 0021-4922, E-ISSN 1347-4065, Vol. 51, no 3, 031103- p.Article in journal (Refereed) Published
Abstract [en]

The optical properties of (0001) ZnO layers grown at 1000 degrees C on (0001) sapphire substrates by halide vapor phase epitaxy (HVPE) were investigated by various photoluminescence (PL) measurements. A layer grown with a H2O/ZnCl2 (VI/II) ratio of 20 on a 0.4-mu m-thick buffer layer exhibited a significant near-band-edge (NBE) peak blueshift and degraded internal quantum efficiency (eta(int)) due to residual compressive stress. Growth with a VI/II ratio of 600 diminished the NBE peak blueshift; however, deep level emission and a reduction of PL decay time (tau(PL)) were caused by point defects generated by excess O source supply. A layer without the NBE peak blueshift and deep level emission was realized by growth with a VI/II ratio of 20 and a buffer layer of 0.8 mu m. The eta(int) and tau(PL) for HVPE-grown layers could be improved to 4.1% and 122.8 ps by using the thick buffer layer and appropriate VI/II ratio.

Place, publisher, year, edition, pages
Japan Society of Applied Physics , 2012. Vol. 51, no 3, 031103- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-76529DOI: 10.1143/JJAP.51.031103ISI: 000301348400011OAI: oai:DiVA.org:liu-76529DiVA: diva2:515139
Note

Funding Agencies|Tokyo University of Agriculture and Technology||Japan Society for the Promotion of Science||

Available from: 2012-04-12 Created: 2012-04-11 Last updated: 2017-12-07

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Hsu, Chih-WeiEriksson, MartinHoltz, Per-Olof

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