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The effect of grain size and phosphorous-doping of polycrystalline 3C-SiC on infrared reflectance spectra
Idaho National Laboratory.
Nelson Mandela Metropolitan University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Journal of Nuclear Materials, ISSN 0022-3115, E-ISSN 1873-4820, Vol. 422, no 1-3, 103-108 p.Article in journal (Refereed) Published
Abstract [en]

The effect of P-doping and grain size of polycrystalline 3C-SiC on the infrared reflectance spectra is reported. The relationship between grain size and full width at half maximum (FWHM) suggest that the behavior of the 3C-SiC with the highest phosphorous doping level (of 1.2 x 10(19) at. cm(-3)) is different from those with lower doping levels (andlt;6.6 x 10(18) at. cm(-3)). It is also further demonstrated that the plasma resonance frequency (omega(p)) is not influenced by the grain size.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 422, no 1-3, 103-108 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-76624DOI: 10.1016/j.jnucmat.2011.12.003ISI: 000301563200013OAI: oai:DiVA.org:liu-76624DiVA: diva2:515432
Note
Funding Agencies|PBMR||Available from: 2012-04-13 Created: 2012-04-13 Last updated: 2017-12-07

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Henry, AnneJanzén, Erik

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