Long Spin Relaxation Times in Wafer Scale Epitaxial Graphene on SiC(0001)
2012 (English)In: Nano letters (Print), ISSN 1530-6984, E-ISSN 1530-6992, Vol. 12, no 3, 1498-1502 p.Article in journal (Refereed) Published
We developed an easy, upscalable process to prepare lateral spin-valve devices on epitaxially grown monolayer graphene on SiC(0001) and perform nonlocal spin transport measurements. We observe the longest spin relaxation times tau(s) in monolayer graphene, while the spin diffusion coefficient D-s is strongly reduced compared to typical results on exfoliated graphene. The increase of tau(s) is probably related to the changed substrate, while the cause for the small value of D-s remains an open question.
Place, publisher, year, edition, pages
American Chemical Society , 2012. Vol. 12, no 3, 1498-1502 p.
Spin transport, Hanle precession, graphene, epitaxial growth
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-77106DOI: 10.1021/nl2042497ISI: 000301406800065OAI: oai:DiVA.org:liu-77106DiVA: diva2:524894
Funding Agencies|NanoNed||Zernike Institute for Advanced Materials||Foundation for Fundamental Research on Matter (FOM)||Deutsche Forschungsgemeinschaft||European Union|257829|2012-05-042012-05-042012-05-04