liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Growth and characterization of epitaxial Ti3GeC2 thin films on 4H-SiC(0001)
Linköping University, Department of Physics, Chemistry and Biology, Applied Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0003-1785-0864
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Show others and affiliations
2012 (English)In: Journal of Crystal Growth, ISSN 0022-0248, E-ISSN 1873-5002, Vol. 343, no 1, 133-137 p.Article in journal (Refereed) Published
Abstract [en]

Epitaxial Ti3GeC2 thin films were deposited on 4 degrees off-cut 4H-SiC(0001) using magnetron sputtering from high purity Ti, C, and Ge targets. Scanning electron microscopy and helium ion microscopy show that the Ti3GeC2 films grow by lateral step-flow with {11 (2) over bar0} faceting on the SiC surface. Using elastic recoil detection analysis, atomic force microscopy, and X-Ray diffraction the films were found to be substoichiometric in Ge with the presence of small Ge particles at the surface of the film.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 343, no 1, 133-137 p.
Keyword [en]
Surface structure, Atomic force microscopy, Helium ion microscopy, Physical vapor deposition processes, Titanium compound
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-77103DOI: 10.1016/j.jcrysgro.2012.01.020ISI: 000302422300023OAI: oai:DiVA.org:liu-77103DiVA: diva2:524900
Note

Funding Agencies|VINN Excellence Center in Research and Innovation on Functional Nanoscale Materials (FunMat) by Swedish Governmental Agency for Innovation Systems (VINNOVA)||

The status of this article was previously Manuscript.

Available from: 2012-05-04 Created: 2012-05-04 Last updated: 2017-12-07
In thesis
1. Nanostructured materials for gas sensing applications
Open this publication in new window or tab >>Nanostructured materials for gas sensing applications
2011 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

In this Thesis I have investigated the use of nanostructured films as sensing and contact layers for field effect gas sensors in order to achieve high sensitivity, selectivity, and long term stability of the devices in corrosive environments at elevated temperatures. Electrochemically synthesized Pd and Au nanoparticles deposited as sensing layers on capacitive field effect devices were found to give a significant response to NOx with small, or no responses to H2, NH3, and C3H6. Pt nanoparticles incorporated in a TiC matrix are catalytically active, but the agglomeration and migration of the Pt particles towards the substrate surface reduces the activity of the sensing layer. Magnetron sputtered epitaxial films from the Ti-Si-C and the Ti-Ge-C systems were grown on 4H-SiC substrates in order to explore their potential as high temperature stable ohmic contact materials to SiC based field effect gas sensors. Ti3SiC2 thin films deposited on 4H-SiC substrates were found to yield ohmic contacts to n-type SiC after a high temperature rapid thermal anneal at 950 ºC. Investigations on the growth mode of Ti3SiC2 thin films with varying Si content on 4H-SiC substrates showed the growth to be lateral step-flow with the propagation of steps with a height as small as half a unit cell. The amount of Si present during deposition leads to differences in surface faceting of the films and Si-supersaturation conditions gives growth of Ti3SiC2 films with the presence of TiSi2 crystallites. Current-voltage measurements of the as-deposited Ti3GeC2 films indicate that this material is also a promising candidate for achieving long term stable contact layers to 4H-SiC for operation at elevated temperatures in corrosive environments. Further investigations into the Ti-Ge-C system showed that the previously unreported solid solutions of (Ti,V)2GeC, (Ti,V)3GeC2 and (Ti,V)4GeC3 can be synthesized, and it was found that the growth of these films is affected by the nature of the substrate.

Place, publisher, year, edition, pages
Linköping: Linköping University Electronic Press, 2011. 61 p.
Series
Linköping Studies in Science and Technology. Dissertations, ISSN 0345-7524 ; 1377
National Category
Natural Sciences
Identifiers
urn:nbn:se:liu:diva-69641 (URN)9789173931403 (ISBN)
Public defence
2011-09-09, Planck, Fysikhuset, Campus Valla, Linköpings universitet, Linköping, 10:15 (English)
Opponent
Supervisors
Available from: 2011-07-08 Created: 2011-07-08 Last updated: 2017-12-14Bibliographically approved

Open Access in DiVA

fulltext(463 kB)460 downloads
File information
File name FULLTEXT01.pdfFile size 463 kBChecksum SHA-512
9a80a7b2d5b203c3dee2e00d2befab8b7bfa823e3166469d48ea576a88acc607af3908269c07e5555c5fbd4116ec632410b34c4e7aaa8a3e14a48f8b26ca62a3
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Buchholt, KristinaEklund, PerJensen, JensLu, JunLloyd Spetz, AnitaHultman, Lars

Search in DiVA

By author/editor
Buchholt, KristinaEklund, PerJensen, JensLu, JunLloyd Spetz, AnitaHultman, Lars
By organisation
Applied PhysicsThe Institute of TechnologyThin Film Physics
In the same journal
Journal of Crystal Growth
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 460 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 414 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf