Formation of α-approximant and quasicrystalline Al-Cu-Fe thin films
(English)Manuscript (preprint) (Other academic)
Multilayered Al-Cu-Fe thin films have been deposited by magnetron sputtering onto Si and Al2O3 substrates with a nominal global composition corresponding to the quasicrystalline phase, 5:2:1. Subsequent annealing was performed on samples up to 710 °C. It is found that when using Si as substrate a film-substrate reaction occurs already below 390 °C, where Si diffuses into the film. This changes the composition, promoting the formation of the α-approximant Al55Si7Cu25.5Fe12.5 in the temperature range 400 to 650 °C over the quasicrystalline ψ-phase. When annealing the same Al-Cu-Fe thin film grown on Al2O3 substrates the Al62.5Cu25Fe12.5 icosahedral quasicrystalline phase is formed.
IdentifiersURN: urn:nbn:se:liu:diva-77382OAI: oai:DiVA.org:liu-77382DiVA: diva2:526595