Structure and Composition of Approximant Thin Films Formed by Substrate Diffusion
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Multilayered Al/Cu/Fe thin films with composition close to the quasicrystalline phase have been prepared by magnetron sputtering. Annealing at 600 °C yields a homogeneous film of the cubic approximant phase by Si substrate diffusion, which prevented the formation of the quasicrystalline phase. After 4 h annealing the film contained 8 at.% Si corresponding well to the expected value of the approximant. The amount of Si in the films is found to slowly increase to ~12 at.% during continued annealing (64 h) while the approximant phase was retained. The lattice parameter was continuously decreasing as Si substituted for Al.
IdentifiersURN: urn:nbn:se:liu:diva-77383OAI: oai:DiVA.org:liu-77383DiVA: diva2:526598