Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
2012 (English)Conference paper (Refereed)
The radiative recombination spectra of 6H-SiC epilayers grown on low angle (1.4° off-axis) substrates have been investigated by low temperature photoluminescence spectroscopy. Four different types of stacking faults have been identified, together with the presence of 3C-SiC inclusions. From the energy of the momentum-conserving phonons, four excitonic band gap energies have been found with Egx equal to 2.837, 2.698, 2.600 and 2.525 eV. These photoluminescence features, which give a rapid and non-destructive approach to identify stacking faults in 6H-SiC, provide a direct feedback to improve the material growth.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 407-410 p.
Temperature Photoluminescence, Stacking Fault
IdentifiersURN: urn:nbn:se:liu:diva-77453DOI: 10.4028/www.scientific.net/MSF.717-720.407ISI: 000309431000096OAI: oai:DiVA.org:liu-77453DiVA: diva2:527131