liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Université Montpellier 2, France.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Université Montpellier 2, France.
Show others and affiliations
2012 (English)Conference paper, Published paper (Refereed)
Abstract [en]

The radiative recombination spectra of 6H-SiC epilayers grown on low angle (1.4° off-axis) substrates have been investigated by low temperature photoluminescence spectroscopy. Four different types of stacking faults have been identified, together with the presence of 3C-SiC inclusions. From the energy of the momentum-conserving phonons, four excitonic band gap energies have been found with Egx equal to 2.837, 2.698, 2.600 and 2.525 eV. These photoluminescence features, which give a rapid and non-destructive approach to identify stacking faults in 6H-SiC, provide a direct feedback to improve the material growth.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 407-410 p.
Keyword [en]
Temperature Photoluminescence, Stacking Fault
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-77453DOI: 10.4028/www.scientific.net/MSF.717-720.407ISI: 000309431000096OAI: oai:DiVA.org:liu-77453DiVA: diva2:527131
Conference
ICSCRM2011
Available from: 2012-05-16 Created: 2012-05-16 Last updated: 2013-01-19

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Sun, JianwuJokubavicius, ValdasYakimova, RositzaSyväjärvi, Mikael

Search in DiVA

By author/editor
Sun, JianwuJokubavicius, ValdasYakimova, RositzaSyväjärvi, Mikael
By organisation
Semiconductor MaterialsThe Institute of Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 99 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf