Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
2012 (English)Conference paper (Refereed)
Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.
Place, publisher, year, edition, pages
2012. Vol. 717-720, 233-236 p.
6H-SiC, photoluminescence, Raman spectroscopy, donor-acceptor-pair emission
IdentifiersURN: urn:nbn:se:liu:diva-77454DOI: 10.4028/www.scientific.net/MSF.717-720.233OAI: oai:DiVA.org:liu-77454DiVA: diva2:527132