liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
Technical University of Denmark, Lyngby.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Technical University of Denmark, Lyngby.
Technical University of Denmark, Lyngby.
Show others and affiliations
2012 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

Place, publisher, year, edition, pages
2012. Vol. 717-720, 233-236 p.
Keyword [en]
6H-SiC, photoluminescence, Raman spectroscopy, donor-acceptor-pair emission
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-77454DOI: 10.4028/www.scientific.net/MSF.717-720.233OAI: oai:DiVA.org:liu-77454DiVA: diva2:527132
Conference
ICSCRM2011
Available from: 2012-05-16 Created: 2012-05-16 Last updated: 2012-09-09

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Jokubavicius, ValdasYakimova, RositzaSyväjärvi, Mikael

Search in DiVA

By author/editor
Jokubavicius, ValdasYakimova, RositzaSyväjärvi, Mikael
By organisation
Semiconductor MaterialsThe Institute of Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 109 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf