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Photoluminescence and Raman spectroscopy characterization of boron and nitrogen-doped 6H silicon carbide
Technical University of Denmark, Lyngby.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Technical University of Denmark, Lyngby.
Technical University of Denmark, Lyngby.
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2012 (English)Conference paper (Refereed)
Abstract [en]

Nitrogen-boron doped 6H-SiC epilayers grown on low off-axis 6H-SiC substrates have been characterized by photoluminescence and Raman spectroscopy. The photoluminescence results show that a doping larger than 1018 cm-3 is favorable to observe the luminescence and addition of nitrogen is resulting in an increased luminescence. A dopant concentration difference larger than 4x1018 cm-3 is proposed to achieve intense photoluminescence. Raman spectroscopy further confirmed the doping type and concentrations for the samples. The results indicate that N-B doped SiC is being a good wavelength converter in white LEDs applications.

Place, publisher, year, edition, pages
2012. Vol. 717-720, 233-236 p.
Keyword [en]
6H-SiC, photoluminescence, Raman spectroscopy, donor-acceptor-pair emission
National Category
Natural Sciences
URN: urn:nbn:se:liu:diva-77454DOI: 10.4028/ diva2:527132
Available from: 2012-05-16 Created: 2012-05-16 Last updated: 2012-09-09

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Jokubavicius, ValdasYakimova, RositzaSyväjärvi, Mikael
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Semiconductor MaterialsThe Institute of Technology
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