On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
2012 (English)Conference paper (Refereed)
Heteroepitaxial growth of 3C-SiC on 0.8 and 1.2 degree off-oriented 6H-SiC substrates was studied using a sublimation growth process. The 3C-SiC layers were grown at high growth rates with layer thickness up to 300 µm. The formation and the quality of 3C-SiC are influenced by the off-orientation of the substrate, the growth temperature (studied temperature range from 1750 oC to 1850oC), and the growth ambient (vacuum at 5*10-5 mbar and nitrogen at 5*10-1 mbar). The largest domains of 3C-SiC and the lowest number of double positioning boundaries were grown using nitrogen ambient and the highest growth temperature. The combined use of low off-axis substrate and high growth rate is a potential method to obtain material with bulk properties.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 193-196 p.
3C-SiC, Low Off-Axis 6H-SiC, Sublimation Epitaxy
IdentifiersURN: urn:nbn:se:liu:diva-77455DOI: 10.4028/www.scientific.net/MSF.717-720.193ISI: 000309431000046OAI: oai:DiVA.org:liu-77455DiVA: diva2:527133