liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
On stabilization of 3C-SiC using low off-axis 6H-SiC substrates
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Show others and affiliations
2012 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Heteroepitaxial growth of 3C-SiC on 0.8 and 1.2 degree off-oriented 6H-SiC substrates was studied using a sublimation growth process. The 3C-SiC layers were grown at high growth rates with layer thickness up to 300 µm. The formation and the quality of 3C-SiC are influenced by the off-orientation of the substrate, the growth temperature (studied temperature range from 1750 oC to 1850oC), and the growth ambient (vacuum at 5*10-5 mbar and nitrogen at 5*10-1 mbar). The largest domains of 3C-SiC and the lowest number of double positioning boundaries were grown using nitrogen ambient and the highest growth temperature. The combined use of low off-axis substrate and high growth rate is a potential method to obtain material with bulk properties.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 193-196 p.
Keyword [en]
3C-SiC, Low Off-Axis 6H-SiC, Sublimation Epitaxy
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-77455DOI: 10.4028/www.scientific.net/MSF.717-720.193ISI: 000309431000046OAI: oai:DiVA.org:liu-77455DiVA: diva2:527133
Conference
ICSCRM2011
Available from: 2012-05-17 Created: 2012-05-17 Last updated: 2013-01-19

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Jokubavicius, ValdasLundqvist, BjörnHens, PhilipLiljedahl, RickardYakimova, RositzaSyväjärvi, Mikael

Search in DiVA

By author/editor
Jokubavicius, ValdasLundqvist, BjörnHens, PhilipLiljedahl, RickardYakimova, RositzaSyväjärvi, Mikael
By organisation
Semiconductor MaterialsThe Institute of Technology
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 147 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf