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Unintentional incorporation of H and related structural and free-electron properties of c- and a-plane InN
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institute Tecnol and Nucl, Portugal .
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institute Tecnol and Nucl, Portugal .
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2012 (English)In: PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, ISSN 1862-6300, Vol. 209, no 1, 91-94 p.Article in journal (Refereed) Published
Abstract [en]

In this work, we present a comprehensive study on the hydrogen impurity depth profiles in InN films with polar c-plane and nonpolar a-plane surface orientations in relation to their structural and free-electron properties. We find that the as-grown nonpolar films exhibit generally higher bulk and near-surface H concentrations compared to the polar InN counter-parts. The latter may be partly associated with a change in the growth mode from 2D to 3D and a decrease in the grain size. Thermal annealing leads to a reduction of H concentrations and the intrinsic H levels are influenced by the structural characteristics of the films. The factors allowing reduction of bulk H and free electron concentrations in a-plane films are discussed.

Place, publisher, year, edition, pages
Wiley-VCH Verlag Berlin , 2012. Vol. 209, no 1, 91-94 p.
Keyword [en]
hydrogen, InN, nonpolar surfaces, unintentional doping
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-77548DOI: 10.1002/pssa.201100175ISI: 000303380700019OAI: oai:DiVA.org:liu-77548DiVA: diva2:528345
Note
Funding Agencies|FCT Portugal|PTDC/FIS/100448/2008|Swedish Research Council (VR)|2010-3848|Available from: 2012-05-25 Created: 2012-05-22 Last updated: 2012-05-25

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Darakchieva, VanyaXie, Mengyao

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