liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Morphology engineering of ZnO nanostructures
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 407, no 10, 1533-1537 p.Article in journal (Refereed) Published
Abstract [en]

Nanosized ZnO structures were grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) in the temperature range 200-500 degrees C at variable precursor pressure. Temperature induced evolution of the ZnO microstructure was observed, resulting in regular transformation of the material from conventional polycrystalline layers to hierarchically arranged sheaves of ZnO nanowires. The structures obtained were uniformly planarly located over the substrate and possessed as low nanowires diameter as 30-45 nm at the tips. The observed growth evolution is explained in terms of ZnO crystal planes free energy difference and growth kinetics. For comparison, the convenient growth at constant precursor pressure on Si and SiC substrates has been performed, resulting in island-type grown ZnO nanostructures. The demonstrated nanosized ZnO structures may have unique possible areas of application, which are listed here.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 10, 1533-1537 p.
Keyword [en]
ZnO nanostructures, APMOCVD, Temperature evolution
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-77524DOI: 10.1016/j.physb.2011.09.079ISI: 000303149600020OAI: oai:DiVA.org:liu-77524DiVA: diva2:528609
Note
Funding Agencies|Swedish Research Link (SRL-VR)|2009-6427|IFM LiU||Available from: 2012-05-28 Created: 2012-05-22 Last updated: 2017-12-07

Open Access in DiVA

fulltext(483 kB)1706 downloads
File information
File name FULLTEXT01.pdfFile size 483 kBChecksum SHA-512
b3efee86044ca7940efdda9b91a9dd2832c098dc742f2e47c54772572843edaa3eaf639672810fe1f1e2f585b6ea5bc553a4d83ba6c1c9742c367367c2dac321
Type fulltextMimetype application/pdf

Other links

Publisher's full text

Authority records BETA

Khranovskyy, VolodymyrYakimova, Rositsa

Search in DiVA

By author/editor
Khranovskyy, VolodymyrYakimova, Rositsa
By organisation
Semiconductor MaterialsThe Institute of Technology
In the same journal
Physica. B, Condensed matter
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
Total: 1706 downloads
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 252 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf