Morphology engineering of ZnO nanostructures
2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 407, no 10, 1533-1537 p.Article in journal (Refereed) Published
Nanosized ZnO structures were grown by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD) in the temperature range 200-500 degrees C at variable precursor pressure. Temperature induced evolution of the ZnO microstructure was observed, resulting in regular transformation of the material from conventional polycrystalline layers to hierarchically arranged sheaves of ZnO nanowires. The structures obtained were uniformly planarly located over the substrate and possessed as low nanowires diameter as 30-45 nm at the tips. The observed growth evolution is explained in terms of ZnO crystal planes free energy difference and growth kinetics. For comparison, the convenient growth at constant precursor pressure on Si and SiC substrates has been performed, resulting in island-type grown ZnO nanostructures. The demonstrated nanosized ZnO structures may have unique possible areas of application, which are listed here.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 10, 1533-1537 p.
ZnO nanostructures, APMOCVD, Temperature evolution
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-77524DOI: 10.1016/j.physb.2011.09.079ISI: 000303149600020OAI: oai:DiVA.org:liu-77524DiVA: diva2:528609
Funding Agencies|Swedish Research Link (SRL-VR)|2009-6427|IFM LiU||2012-05-282012-05-222012-06-29