Optical identification and electronic configuration of tungsten in 4H-and 6H-SiC
2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 407, no 10, 1462-1466 p.Article in journal (Refereed) Published
Several optically observed deep level defects in SiC are still unidentified and little is published on their behavior. One of the commonly observed deep level defects in semi-insulating SiC is UD-1. less thanbrgreater than less thanbrgreater thanThis report suggests that UD-1 is Tungsten related, based on a doping study and previously reported deep level transient spectroscopy data, as well as photo-induced absorption measurements. The electronic levels involved in the optical transitions of UD-1 are also deduced. The transitions observed in the photoluminescence of UD-1 are from a Gamma(C3v)(4), to two different final states, which transform according to Gamma(C3v)(5)circle plus Gamma(C3v)(6) and Gamma(C3v)(4), respectively.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 10, 1462-1466 p.
Deep level defect, PL, Transition metal
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-77521DOI: 10.1016/j.physb.2011.09.062ISI: 000303149600003OAI: oai:DiVA.org:liu-77521DiVA: diva2:528612