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The origin of a peak in the reststrahlen region of SiC
Nelson Mandela Metropolitan University.
Nelson Mandela Metropolitan University.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, E-ISSN 1873-2135, Vol. 407, no 10, 1525-1528 p.Article in journal (Refereed) Published
Abstract [en]

A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 10, 1525-1528 p.
Keyword [en]
Infrared reflectance, SiC, Reststrahlen region, Anomalous peak
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-77520DOI: 10.1016/j.physb.2011.09.077ISI: 000303149600018OAI: oai:DiVA.org:liu-77520DiVA: diva2:528613
Note
Funding Agencies|South Africa/Swedish Research Cooperation Program||National Research Foundation (NRF) of South Africa||Available from: 2012-05-28 Created: 2012-05-22 Last updated: 2017-12-07

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Henry, AnneJanzén, Erik

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