The origin of a peak in the reststrahlen region of SiC
2012 (English)In: Physica. B, Condensed matter, ISSN 0921-4526, Vol. 407, no 10, 1525-1528 p.Article in journal (Refereed) Published
A peak in the reststrahlen region of SiC is analyzed in order to establish the origin of this peak. The peak can be associated with a thin damaged layer on the SiC wafers, and a relation is found between surface roughness and the height of this peak, by modeling the damaged layer as an additional layer when simulating the reflectivity from the wafers.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 10, 1525-1528 p.
Infrared reflectance, SiC, Reststrahlen region, Anomalous peak
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-77520DOI: 10.1016/j.physb.2011.09.077ISI: 000303149600018OAI: oai:DiVA.org:liu-77520DiVA: diva2:528613
Funding Agencies|South Africa/Swedish Research Cooperation Program||National Research Foundation (NRF) of South Africa||2012-05-282012-05-222014-10-08