Low-voltage ambipolar polyelectrolyte-gated organic thin film transistors
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 18, 183302- p.Article in journal (Refereed) Published
Organic transistors that use polyelectrolytes as gate insulators can be driven at very low voltages (andlt;1 V). The low operating voltage is possible thanks to the formation of electric double layers upon polarization, which generates large electric fields at the critical interfaces in the device structure. In this work, we use a semiconducting blend (of a high electron affinity polymer and a low ionization potential one) in conjunction with a solid polyelectrolyte insulator to fabricate low-voltage ambipolar organic transistors. For both n- and p-channel operation, we use a polycation with readily mobile-yet large enough to limit bulk doping of the semiconductor-counterions.
Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2012. Vol. 100, no 18, 183302- p.
National CategoryEngineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-77731DOI: 10.1063/1.4709484ISI: 000303598600055OAI: oai:DiVA.org:liu-77731DiVA: diva2:529446
Funding Agencies|EU through the EC|212311|Swedish Government (Advanced Functional Materials)||Swedish Foundation for Strategic Research (OPEN)||Knut and Alice Wallenberg Foundation||Onnesjo Foundation||2012-05-302012-05-282015-10-16