Increasing the Selectivity of Pt-Gate SiC Field Effect Gas Sensors by Dynamic Temperature ModulationShow others and affiliations
2012 (English)In: IEEE Sensors Journal, ISSN 1530-437X, E-ISSN 1558-1748, Vol. 12, no 6Article in journal (Refereed) Published
Abstract [en]
Based on a diode coupled silicon carbide field effect transistor (FET) with platinum as catalytic gate material, the influence of dynamic temperature modulation on the selectivity of gas analysis sensors FETs has been investigated. This operating mode, studied intensively for semiconductor gas sensors, has only recently been applied to FETs. A suitable temperature cycle for detection of typical exhaust gases (CO, NO, C3H6, H-2, NH3) was developed and combined with appropriate signal processing. The sensor data were evaluated using multivariate statistics, e.g., linear discriminant analysis. Measurements have proven that typical exhaust gases can be discriminated in backgrounds with 0, 10, and 20% oxygen. Furthermore, we are able to quantify the mentioned gases and to determine unknown concentrations based on training data. Very low levels of relative humidity below a few percent influence the sensor response considerably but for higher levels the cross interference of humidity is negligible. In addition, experiments regarding stability and reproducibility were performed.
Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2012. Vol. 12, no 6
Keywords [en]
Metal insulator silicon carbide field effect transistors (MISiC FET), NOx, selectivity, temperature modulation, virtual multisensor
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-77724DOI: 10.1109/JSEN.2011.2179645ISI: 000303400500017OAI: oai:DiVA.org:liu-77724DiVA, id: diva2:529460
Note
Funding Agencies|Swedish Research Council||Swedish Agency for Innovation Systems (VINNOVA)||Swedish Industry through the VINN Excellence Centre FunMat||
2012-05-302012-05-282017-12-07