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Small epitaxial graphene devices for magnetosensing applications
NPL.
Chalmers.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
NPL.
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2012 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 111, no 7, 07E509- p.Article in journal (Refereed) Published
Abstract [en]

Hall sensors with the width range from 0.5 to 20.0 mu m have been fabricated out of a monolayer graphene epitaxially grown on SiC. The sensors have been studied at room temperature using transport and noise spectrum measurements. The minimum detectable field of a typical 10-mu m graphene sensor is approximate to 2.5 mu T/root Hz, making them comparable with state of the art semiconductor devices of the same size and carrier concentration and superior to devices made of CVD graphene. Relatively high resistance significantly restricts performance of the smallest 500-nm devices. Carrier mobility is strongly size dependent, signifying importance of both intrinsic and extrinsic factors in the optimization of the device performance.

Place, publisher, year, edition, pages
American Institute of Physics (AIP) , 2012. Vol. 111, no 7, 07E509- p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-78282DOI: 10.1063/1.3677769ISI: 000303282401322OAI: oai:DiVA.org:liu-78282DiVA: diva2:531815
Note
Funding Agencies|EU|JRP IND 11|Available from: 2012-06-08 Created: 2012-06-08 Last updated: 2017-12-07

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Yakimova, Rositsa

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