A diagonal cut through the SiC bulk unit cell: Structure and composition of the 4H-SiC(1-102) surface
2008 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 92, no 6, 061902- p.Article in journal (Refereed) Published
The atomic and electronic structure of 4H-SiC(102) surfaces was investigated using low-energy electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. Three well ordered phases can be prepared by Si deposition and annealing. The (2×1) phase is Si enriched and terminated by an ordered array of Si-adatom chains which contribute an anisotropic electronic surface state. The c(2×2) phase has a surface composition close to SiC bulk and possesses adatoms in the periodicity of the superlattice. At high temperatures, a (1×1) phase develops with a graphitelike composition.
Place, publisher, year, edition, pages
College Park, MD, USA: American Institute of Physics (AIP), 2008. Vol. 92, no 6, 061902- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78515DOI: 10.1063/1.2839384OAI: oai:DiVA.org:liu-78515DiVA: diva2:533611