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Atomic and Electronic Structure of the (2x1) and c(2x2) 4H-SiC(1(1)over-bar02) Surfaces
Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany.
Max- Planck-Institut für Festkörperforschung, Stuttgart, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Department of Physics and Astronomy, University of Pittsburgh, USA.
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2008 (English)In: SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2 / [ed] Suzuki, A; Okumura, H; Kimoto, T; Fuyuki, T; Fukuda, K; Nishizawa, S, Trans Tech Publications Inc., 2008, Vol. 600-603, 291-296 p.Conference paper, Published paper (Refereed)
Abstract [en]

The atomic and electronic structure of 4H-SiC(1 1 02) surfaces were investigated usingscanning tunneling microscopy (STM), low-energy electron diffraction (LEED) and photoemission(PES). Two well ordered phases existing on this surface, i.e. (2×1) and c(2×2) are discussed. The(2×1) phase consists of a Si adlayer which is topped by an array of ordered Si-nanowires withelectronic states confined to one dimension. For the c(2×2) phase STM indicates the presence ofadatoms and PES a surface composition close to bulk SiC stoichiometry. A detailed atomic modelfor this c(2×2) phase is proposed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2008. Vol. 600-603, 291-296 p.
Series
Materials Science Forum, ISSN 0255-5476 ; Vols. 600-603
Keyword [en]
atomic structure, electronic structure, 4H-SiC(1 1 02), photoemission, STM, LEED, one dimension
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-78518DOI: 10.4028/www.scientific.net/MSF.600-603.291ISI: 000263555300068OAI: oai:DiVA.org:liu-78518DiVA: diva2:533623
Conference
International Conference on Silicon Carbide and Related Materials (ICSCRM2007,Otsu, JAPAN, OCT 14-19, 2007
Available from: 2012-06-14 Created: 2012-06-14 Last updated: 2014-09-12Bibliographically approved

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Virojanadara, ChariyaJohansson, Leif I.

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