liu.seSearch for publications in DiVA
Change search
ReferencesLink to record
Permanent link

Direct link
Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
University of South Florida, Tampa, USA.
University of South Florida, Tampa, USA.
University of South Florida, Tampa, USA.
(Max-Planck-Institut für Festkörperforschung, Stuttgart, Germany)
Show others and affiliations
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 6, 061914- p.Article in journal (Refereed) Published
Abstract [en]

Themorphology and structure of 3C-SiC(001) surfaces, grown on Si(001) andprepared via hydrogen etching, are studied using atomic force microscopy(AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES).On the etched samples, flat surfaces with large terraces andatomic steps are revealed by AFM. In ultrahigh vacuum asharp LEED pattern with an approximate (5×1) periodicity is observed. AES studies reveal a “bulklike” composition up to the nearsurface region and indicate that an overlayer consisting of aweakly bound silicon oxide monolayer is present.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007. Vol. 91, no 6, 061914- p.
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-78519DOI: 10.1063/1.2768870ISI: 000248661400041OAI: diva2:533634
Available from: 2012-06-14 Created: 2012-06-14 Last updated: 2012-08-27Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text

Search in DiVA

By author/editor
Virojanadara, Chariya
In the same journal
Applied Physics Letters
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 40 hits
ReferencesLink to record
Permanent link

Direct link