Surface studies of hydrogen etched 3C-SiC(001) on Si(001)
2007 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 91, no 6, 061914- p.Article in journal (Refereed) Published
Themorphology and structure of 3C-SiC(001) surfaces, grown on Si(001) andprepared via hydrogen etching, are studied using atomic force microscopy(AFM), low-energy electron diffraction (LEED), and Auger electron spectroscopy (AES).On the etched samples, flat surfaces with large terraces andatomic steps are revealed by AFM. In ultrahigh vacuum asharp LEED pattern with an approximate (5×1) periodicity is observed. AES studies reveal a “bulklike” composition up to the nearsurface region and indicate that an overlayer consisting of aweakly bound silicon oxide monolayer is present.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2007. Vol. 91, no 6, 061914- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78519DOI: 10.1063/1.2768870ISI: 000248661400041OAI: oai:DiVA.org:liu-78519DiVA: diva2:533634