Nanowire Reconstruction on the 4H-SiC(1-102) Surface
2007 (English)In: Silicon Carbide and Related Materials 2006 / [ed] N. Wright, C.M. Johnson, K. Vassilevski, I. Nikitina and A. Horsfall, Trans Tech Publications Inc., 2007, Vol. 556-557, 529-532 p.Conference paper (Refereed)
Ordered reconstruction phases on the 4H-SiC(1102) surface have been investigated usinglow-energy electron diffraction (LEED), Auger electron spectroscopy (AES) and scanning tunnelingmicroscopy (STM). After initial hydrogen etching, the samples were prepared by Si deposition andannealing in ultra-high vacuum (UHV). Two distinct reconstruction phases develop upon annealing,first with a (2×1), and at higher temperatures with a c(2×2) LEED pattern. After further annealingthe fractional order LEED spots vanish and a (1x1) pattern develops. For the (2×1) phase, STMmicrographs show that adatom chains develop on large flat terraces, which in view of AES consistof additional Si. These highly linear and equidistant chains represent a self-assembled well-orderedpattern of nanowires developing due to the intrinsic structure of the 4H-SiC(1102) surface. For thec(2×2) phase AES indicates a surface composition close to the bulk stoichiometry. For the (1×1)phase a further Si depletion is observed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2007. Vol. 556-557, 529-532 p.
, Materials Science Forum, ISSN 0255-5476 ; Vol. 556-557
Surface structure, Reconstruction, Nanowire, 4H-SiC, SiC(1102), Low-Energy Electron Diffraction, Scanning Tunneling Microscopy, Auger Electron Spectroscopy, LEED, AES, STM, One-dimensional electronic state.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78524DOI: 10.4028/www.scientific.net/MSF.556-557.529ISI: 000249653900126OAI: oai:DiVA.org:liu-78524DiVA: diva2:533722
6th European Conference on Silicon Carbide and Related Materials (ECSCRM2006), Newcastle upon Tyne, ENGLAND, SEP, 2006