Surface morphology and structure of hydrogen etched 3C-SiC(001) on Si(001)
2006 (English)In: Silicon Carbide 2006 - Materials, Processing and Devices, Materials Research Society, 2006, 131-136 p.Conference paper (Other academic)
The surface of 3C-SiC(001) single-crystal epilayers grown on Si(001) substrates is well known to be inhomogeneous and defective. Therefore, the control and understanding at the atomic scale of 3C-SiC surfaces is a key issue. We study the effect of hydrogen etching at different temperatures on the morphology of 3C-SiC(001) surfaces by using Nomarksi optical microscopy, atomic force microscopy (AFM) and scanning electron microscopy (SEM). As-grown 3C-SiC(001) samples have been hydrogen etched in a horizontal hot-wall chemical vapor deposition (CVD) reactor at atmospheric pressure for different times and temperatures. Flat, high-quality surfaces presenting defined atomic terraces were observed within the 3C-SiC grain boundaries after etching at 1200°C for 30 minutes. Higher etching temperatures resulted in surfaces with step bunching and enlarged surface defects. Samples etched under the best conditions have been studied using low-energy electron diffraction (LEED) and Auger electron spectroscopy (AES).
Place, publisher, year, edition, pages
Materials Research Society, 2006. 131-136 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; Volume 911
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78525DOI: 10.1557/PROC-0911-B08-02ISI: 000242213500017OAI: oai:DiVA.org:liu-78525DiVA: diva2:533768
Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2006 MRS Spring Meeting, April 17 - 21, San Francisco, California, USA