Atomic Structure of Non-Basal-Plane SiC Surfaces: Hydrogen Etching and Surface Phase Transformations
2006 (English)In: Silicon Carbide 2006 - Materials, Processing and Devices / [ed] Dudley, M; Capano, MA; Kimoto, T; Powell, AR; Wang, S, Materials Research Society, 2006, 271-282 p.Conference paper (Other academic)
A-plane (11-20) and diagonal cut (1-102) and (-110-2) surfaces of 4H-SiC have been investigated using atomic force microscopy (AFM), low-energy electron diffraction (LEED), Auger electron spectroscopy (AES), X-ray photoemission spectroscopy (XPS) and scanning tunneling microscopy (STM). After hydrogen etching the surfaces show large, flat terraces. On SiC(11-20) steps down to single atomic heights are observed. On the diagonal cut surfaces steps run parallel and perpendicular to the [-1101] direction, yet drastically different morphologies for the two isomorphic orientations are found. All surfaces immediately display a sharp LEED pattern. For SiC(1-102) and SiC(-110-2) the additional significant presence of oxygen in the AES spectra indicates the development of an ordered oxide. All three surfaces show an oxygen free, well ordered surface after Si deposition and annealing. A transformation between different surface phases is observed upon annealing.
Place, publisher, year, edition, pages
Materials Research Society, 2006. 271-282 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; Volume 911
surface chemistry; crystallographic structure; scanning probe microscopy (SPM
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78527DOI: 10.1557/PROC-0911-B07-01ISI: 000242213500038ISBN: 1-55899-867-5OAI: oai:DiVA.org:liu-78527DiVA: diva2:533864
Symposium on Silicon Carbide-Materials, Processing and Devices held at the 2006 MRS Spring Meeting, San Francisco, CA, USA, APR 18-20, 2006