The influence of substrate morphology on thickness uniformity and unintentional doping of epitaxial graphene on SiC
2012 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 100, no 24, 241607- p.Article in journal (Refereed) Published
A pivotal issue for the fabrication of electronic devices on epitaxial graphene on SiC is controlling the number of layers and reducing localized thickness inhomogeneities. Of equal importance is to understand what governs the unintentional doping of the graphene from the substrate. The influence of substrate surface topography on these two issues was studied by work function measurements and local surface potential mapping. The carrier concentration and the uniformity of epitaxial graphene samples grown under identical conditions and on substrates of nominally identical orientation were both found to depend strongly on the terrace width of the SiC substrate after growth.
Place, publisher, year, edition, pages
2012. Vol. 100, no 24, 241607- p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78669DOI: 10.1063/1.4729556ISI: 000305269200022OAI: oai:DiVA.org:liu-78669DiVA: diva2:534604