Controlled Growth of ZnO Nanowires on Graphene surface
(English)Manuscript (preprint) (Other academic)
Graphene, a perfect two-dimensional (2D) and completely p-conjugated honeycomb network of carbon, can potentially be a platform to serve as a substrate for growth of semiconductor nanostructures. High quality graphene films are prepared by sublimation on semiinsulating SiC grown by high temperature chemical vapor deposition (HTCVD) and on SiO2 by wet chemistry routine. Selective growth of ZnO nanowires (NWs) is performed on the graphene surface by the hydrothermal method. Mechanical stability of the graphene-ZnO heterojunction is tested by a utilizing a very simple technique. 1D ZnO NWs exhibit strong binding with 2D graphene surface and the NWs grown on graphene are of high crystal quality. This result can be very important for realizing the ultimate goal of 3D assembly at the nanoscale. The electrical contact between graphene and ZnO was analyzed by current vs. voltage (I-V) characteristics. The graphene-ZnO junction behaved as a typical metal-semiconductor ohmic contact lacking a contact barrier. These combined graphene-ZnO 3D heterojunction can pave the way for the next-generation of nano and optoelectronic devices.
IdentifiersURN: urn:nbn:se:liu:diva-78675OAI: oai:DiVA.org:liu-78675DiVA: diva2:534699