The registry of graphene layers grown on SiC(000-1)
2012 (English)In: Materials Science Forum Vols 717 - 720, Trans Tech Publications Inc., 2012, Vol. 717-720, 613-616 p.Conference paper (Refereed)
Graphene samples were grown on the C-face of SiC, at high temperature in a furnace andan Ar ambient, and were investigated using LEEM, XPEEM, LEED, XPS and ARPES. Formationof fairly large grains (crystallographic domains) of graphene exhibiting sharp 1x1 patterns in μ-LEED was revealed and that different grains showed different azimuthal orientations. Selective areaconstant initial energy photoelectron angular distribution patterns recorded showed the same results,ordered grains and no rotational disorder between adjacent layers. A grain size of up to a few μmwas obtained on some samples.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 613-616 p.
graphene, C-face SiC, ordered grains, LEEM, XPEEM, μ-LEED and ARPES
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78690DOI: 10.4028/www.scientific.net/MSF.717-720.613ISI: 000309431000146OAI: oai:DiVA.org:liu-78690DiVA: diva2:534757
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA