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Control of epitaxial graphene thickness on 4H-SiC(0001) and bufferlayer removal through hydrogen intercalation
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Institute of Solid State Physics, University of Bremen, Germany.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Materials Science Forum (Volumes 717 - 720), Trans Tech Publications Inc., 2012, Vol. 717-720, 605-608 p.Conference paper, Published paper (Refereed)
Abstract [en]

We report graphene thickness, uniformity and surface morphology dependence on thegrowth temperature and local variations in the off-cut of Si-face 4H-SiC on-axis substrates. Thetransformation of the buffer layer through hydrogen intercalation and the subsequent influence onthe charge carrier mobility are also studied. A hot-wall CVD reactor was used for in-situ etching,graphene growth in vacuum and the hydrogen intercalation process. The number of graphene layersis found to be dependent on the growth temperature while the surface morphology also depends onthe local off-cut of the substrate and results in a non-homogeneous surface. Additionally, the influence of dislocations on surface morphology and graphene thickness uniformity is also presented.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 605-608 p.
Keyword [en]
epitaxial graphene, growth, hydrogen intercalation, LEEM, ARPES, mobility
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-78696DOI: 10.4028/www.scientific.net/MSF.717-720.605ISI: 000309431000144OAI: oai:DiVA.org:liu-78696DiVA: diva2:534776
Conference
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA
Available from: 2012-06-18 Created: 2012-06-18 Last updated: 2013-02-04

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ul-Hassan, JawadVirojanadara, ChariyaIvanov, Ivan GueorguievWatcharinyanon, SomsakulJohansson, Leif I.Janzén, Erik

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ul-Hassan, JawadVirojanadara, ChariyaIvanov, Ivan GueorguievWatcharinyanon, SomsakulJohansson, Leif I.Janzén, Erik
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Semiconductor MaterialsThe Institute of Technology
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