Control of epitaxial graphene thickness on 4H-SiC(0001) and bufferlayer removal through hydrogen intercalation
2012 (English)In: Materials Science Forum (Volumes 717 - 720), Trans Tech Publications Inc., 2012, Vol. 717-720, 605-608 p.Conference paper (Refereed)
We report graphene thickness, uniformity and surface morphology dependence on thegrowth temperature and local variations in the off-cut of Si-face 4H-SiC on-axis substrates. Thetransformation of the buffer layer through hydrogen intercalation and the subsequent influence onthe charge carrier mobility are also studied. A hot-wall CVD reactor was used for in-situ etching,graphene growth in vacuum and the hydrogen intercalation process. The number of graphene layersis found to be dependent on the growth temperature while the surface morphology also depends onthe local off-cut of the substrate and results in a non-homogeneous surface. Additionally, the influence of dislocations on surface morphology and graphene thickness uniformity is also presented.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 717-720, 605-608 p.
epitaxial graphene, growth, hydrogen intercalation, LEEM, ARPES, mobility
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-78696DOI: 10.4028/www.scientific.net/MSF.717-720.605ISI: 000309431000144OAI: oai:DiVA.org:liu-78696DiVA: diva2:534776
14th International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), 11-16 September 2011, Cleveland, OH, USA