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CVD growth of 3C-SiC on 4H-SiC substrate
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.ORCID iD: 0000-0001-5768-0244
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
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2012 (English)In: Materials Science Forum Vol 711, Trans Tech Publications Inc., 2012, Vol. 711, 16-21 p.Conference paper, Published paper (Refereed)
Abstract [en]

The hetero epitaxial growth of 3C-SiC on nominally on-axis 4H-SiC is reported. A horizontal hot-wall CVD reactor working at low pressure is used to perform the growth experiments in a temperature range of 1200-1500 °C with the standard chemistry using silane and propane as precursors carried by a mix of hydrogen and argon. The optimal temperature for single-domain growth is found to be about 1350 °C. The ramp up-conditions and the gas-ambient atmosphere when the temperature increases are key factors for the quality of the obtained 3C layers. The best pre-growth ambient found is carbon rich environment; however time of this pre-treatment is crucial. A too high C/Si ratio during growth led to polycrystalline material whereas for too low C/Si ratios Si cluster formation is observed on the surface. The addition of nitrogen gas is also explored.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2012. Vol. 711, 16-21 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:liu:diva-79057DOI: 10.4028/www.scientific.net/MSF.711.16ISI: 000302673900003OAI: oai:DiVA.org:liu-79057DiVA: diva2:538040
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HeteroSiC & WASMPE 2011
Available from: 2012-06-28 Created: 2012-06-28 Last updated: 2014-10-08

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Henry, AnneLi, XunLeone, StefanoKordina, OlofJanzén, Erik

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