Growth of High Quality Epitaxial Rhombohedral Boron Nitride
2012 (English)In: Crystal Growth & Design, ISSN 1528-7483, E-ISSN 1528-7505, Vol. 12, no 6, 3215-3220 p.Article in journal (Refereed) Published
Epitaxial growth of sp(2)-hybridized boron nitride (sp(2) BN) films on sapphire substrates is demonstrated in a hot wall chemical vapor deposition reactor at the temperature of 1500 degrees C, using triethyl boron and ammonia as precursors. The influence of the main important process parameters, temperature, N/B ratio, B/H-2 ratio, and carrier gas composition on the quality of the grown layers is investigated in detail. X-ray diffraction shows that epitaxial rhombohedral BN (r-BN) film can be deposited only in a narrow process parameter window; outside this window either turbostratic-BN or amorphous BN is favored if BN is formed. In addition, a thin strained AlN buffer layer is needed to support epitaxial growth of r-BN film on sapphire since only turbostratic BN is formed on sapphire substrate. The quality of the grown film is also affected by the B/H-2 ratio as seen from a change of the spacing between the basal planes as revealed by X-ray diffraction. Time-of-flight elastic recoil detection analysis shows an enhancement of the C and O impurities incorporation at lower growth temperatures. The gas phase chemistry for the deposition is discussed as well as the impact of the growth rate on the quality of the BN film.
Place, publisher, year, edition, pages
American Chemical Society , 2012. Vol. 12, no 6, 3215-3220 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-79095DOI: 10.1021/cg300364yISI: 000304838000062OAI: oai:DiVA.org:liu-79095DiVA: diva2:538261
Funding Agencies|Swedish Research Council|VR 621-2009-5264VR 622-2008-1247|2012-06-292012-06-292015-03-11