ZrB2 thin films grown by high power impulse magnetron sputtering (HiPIMS) from a compound target
2012 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 526, 163-167 p.Article in journal (Refereed) Published
ZrB2 thin films were grown on Si by high power impulse magnetron sputtering (HiPIMS) from a compound target in an industrial deposition system. By keeping a constant average power while modifying the HiPIMS pulse repetition frequency, the pulse peak current and thereby the degree of ionisation was varied. The films were characterised using X-ray diffraction techniques, scanning electron microscopy, time-of-flight elastic recoil detection analysis, and four-point probe measurements. It was found that the composition of the films matched closely that of the target material, and the films were low in contamination. The films were crystalline with a strong (000n) preferred orientation, and that the residual stress could be adjusted, from tensile to compressive, by increasing the degree of ionisation. The film morphology appeared dense, with a smooth surface, and the resistivity was found to range from 180 to 250 μΩcm with no clear dependence on frequency in the investigated parameter range.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 526, 163-167 p.
Zirconium diboride, Thin films, High power impulse magnetron sputtering, High power pulsed magnetron sputtering, Compound target, Industrial scale deposition system, Crystalline films
Natural Sciences Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-79305DOI: 10.1016/j.tsf.2012.11.006ISI: 000313703200027OAI: oai:DiVA.org:liu-79305DiVA: diva2:540327