Polarization-controlled photon emission from site-controlled InGaN quantum dots
(English)Manuscript (preprint) (Other academic)
The optical polarization properties of hot-wall MOCVD grown of InGaN quantum dots (QDs) located at the apex of elongated hexagonal GaN pyramids are presented. The QDs showed spectrally narrow and strongly linearly polarized emission lines with average polarization ratios above 0.8 in the microphoto-luminescence spectra. By a comprehensive statistical analysis including more than 1000 InGaN QDs it was concluded that the polarization direction of the QDs follows the spatial elongation of the underlying GaN pyramids when elongated in the <2110> directions.
IdentifiersURN: urn:nbn:se:liu:diva-79323OAI: oai:DiVA.org:liu-79323DiVA: diva2:540389