Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
2012 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 86, no 10, 1595-1599 p.Article in journal (Refereed) Published
3C-SiC layers have been grown by using sublimation epitaxy at a source temperature of 2000 degrees C, under vacuum conditions (andlt;10(-5) mbar) on well oriented (on-axis) 6H-SiC (0001) substrates. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite crucible with a possibility to change the growth environment from Si vapor-rich to C vapor-rich. The optical microscopy in transmission mode reveals continuous 3C-domains for 3C-SiC with less than 0.4% 6H-inclusions for the layer grown at Si-rich conditions, and separate 3C-SiC domains for the layer grown at C-rich conditions. The type of 6H-inclusions for layers with continuous domain structure investigated by Atomic Force Microscopy (AFM) is discussed. 2Theta-omega scan shows 0006 and 111 peaks coming from the substrate and the layer, respectively with a higher intensity of the 111 peak for 3C-SiC grown at Si-rich conditions which is related with the continuous character of the 3C-SiC domains.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 86, no 10, 1595-1599 p.
3C-SiC, Sublimation heteroepitaxy, Morphology, AFM, HRXRD
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-79641DOI: 10.1016/j.vacuum.2012.03.020ISI: 000306390200032OAI: oai:DiVA.org:liu-79641DiVA: diva2:543969
Funding Agencies|European Community through the MANSiC|MRTN-CT-2006-035735|2012-08-132012-08-132012-08-13