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Sublimation epitaxy of 3C-SiC grown at Si- and C-rich conditions
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
2012 (English)In: Vacuum, ISSN 0042-207X, E-ISSN 1879-2715, Vol. 86, no 10, 1595-1599 p.Article in journal (Refereed) Published
Abstract [en]

3C-SiC layers have been grown by using sublimation epitaxy at a source temperature of 2000 degrees C, under vacuum conditions (andlt;10(-5) mbar) on well oriented (on-axis) 6H-SiC (0001) substrates. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite crucible with a possibility to change the growth environment from Si vapor-rich to C vapor-rich. The optical microscopy in transmission mode reveals continuous 3C-domains for 3C-SiC with less than 0.4% 6H-inclusions for the layer grown at Si-rich conditions, and separate 3C-SiC domains for the layer grown at C-rich conditions. The type of 6H-inclusions for layers with continuous domain structure investigated by Atomic Force Microscopy (AFM) is discussed. 2Theta-omega scan shows 0006 and 111 peaks coming from the substrate and the layer, respectively with a higher intensity of the 111 peak for 3C-SiC grown at Si-rich conditions which is related with the continuous character of the 3C-SiC domains.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 86, no 10, 1595-1599 p.
Keyword [en]
3C-SiC, Sublimation heteroepitaxy, Morphology, AFM, HRXRD
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-79641DOI: 10.1016/j.vacuum.2012.03.020ISI: 000306390200032OAI: oai:DiVA.org:liu-79641DiVA: diva2:543969
Note
Funding Agencies|European Community through the MANSiC|MRTN-CT-2006-035735|Available from: 2012-08-13 Created: 2012-08-13 Last updated: 2017-12-07

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Beshkova, MilenaBirch, JensSyväjärvi, MikaelYakimova, Rositsa

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Beshkova, MilenaBirch, JensSyväjärvi, MikaelYakimova, Rositsa
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