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A high-linearity SiGe RF power amplifier for 3G and 4G small basestations
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
Linköping University, Department of Electrical Engineering, Electronic Devices. Linköping University, The Institute of Technology.
2012 (English)In: International journal of electronics (Print), ISSN 0020-7217, E-ISSN 1362-3060, Vol. 99, no 8, 1145-1153 p.Article in journal (Refereed) Published
Abstract [en]

This article presents the design and evaluation of a linear 3.3V SiGe power amplifier for 3G and 4G femtocells with 18dBm modulated output power at 2140 MHz. Different biasing schemes to achieve high linearity with low standby current were studied. The adjacent channel power ratio linearity performance with wide-band code division multiple access (3G) and long term evolution (4G) downlink signals were compared and differences analysed and explained.

Place, publisher, year, edition, pages
Taylor andamp; Francis , 2012. Vol. 99, no 8, 1145-1153 p.
Keyword [en]
power amplifier; WCDMA; LTE; biasing; linearity; ACPR
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-79712DOI: 10.1080/00207217.2011.651695ISI: 000306287700008OAI: oai:DiVA.org:liu-79712DiVA: diva2:544084
Available from: 2012-08-13 Created: 2012-08-13 Last updated: 2017-12-07

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Johansson, TedFritzin, Jonas

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
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