On the effect of water and oxygen in chemical vapor deposition of boron nitride
2012 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 520, no 18, 5889-5893 p.Article in journal (Refereed) Published
Growth studies of sp(2)-hybridized boron nitride (BN) phases by thermal chemical vapor deposition (CVD) are presented; of particular interest is the presence of oxygen and water during growth. While Fourier transform infrared spectroscopy reveals the presence of B-N bonds and elemental analysis by elastic recoil detection analysis shows that the films are close to stoichiometric, although containing a few atomic percent oxygen and hydrogen, X-ray diffraction measurements show no indications for nucleation of any crystalline BN phases, despite change in N/B-ratio and/or process temperature. Thermodynamic modeling suggests that this is due to formation of strong B-O bonds already in the gas phase in the presence of water or oxygen during growth. This growth behavior is believed to be caused by an uncontrolled release of water and/or oxygen in the deposition chamber and highlights the sensitivity of the BN CVD process towards oxygen and water.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 520, no 18, 5889-5893 p.
Boron nitride; Chemical vapor deposition; Water; Oxygen
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-79682DOI: 10.1016/j.tsf.2012.05.004ISI: 000306104100009OAI: oai:DiVA.org:liu-79682DiVA: diva2:544276