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Nucleation and Resistivity of Ultrathin TiN Films Grown by High-Power Impulse Magnetron Sputtering
University of Iceland, Reykjavik, Iceland and Uppsala University, Sweden .
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
University of Iceland, Reykjavik, Iceland .
University of Iceland, Reykjavik, Iceland and Shanghai Jiao Tong University, Peoples R China .
2012 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 33, no 7, 1045-1047 p.Article in journal (Refereed) Published
Abstract [en]

TiN films have been grown on SiO2 by reactive high-power impulse magnetron sputtering (HiPIMS) at temperatures of 22 degrees C-600 degrees C. The film resistance is monitored in situ to determine the coalescence and continuity thicknesses that decrease with increasing growth temperature with a minimum of 0.38 +/- 0.05 nm and 1.7 +/- 0.2 nm, respectively, at 400 degrees C. We find that HiPIMS-deposited films have significantly lower resistivity than dc magnetron sputtered (dcMS) films on SiO2 at all growth temperatures due to reduced grain boundary scattering. Thus, ultrathin continuous TiN films with superior electrical characteristics can be obtained with HiPIMS at reduced temperatures compared to dcMS.

Place, publisher, year, edition, pages
Institute of Electrical and Electronics Engineers (IEEE) , 2012. Vol. 33, no 7, 1045-1047 p.
Keyword [en]
Diffusion barrier; high-power impulse magnetron sputtering (HiPIMS); resistivity; TiN
National Category
Engineering and Technology
URN: urn:nbn:se:liu:diva-79677DOI: 10.1109/LED.2012.2196018ISI: 000305835300043OAI: diva2:544284
Available from: 2012-08-14 Created: 2012-08-13 Last updated: 2012-08-21

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Ingason, Arni Sigurdur
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