liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Thin-film electro-acoustic sensors based on AlN and its alloys: possibilities and limitations
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
2012 (English)In: Microsystem Technologies: Micro- and Nanosystems Information Storage and Processing Systems, ISSN 0946-7076, E-ISSN 1432-1858, Vol. 18, no 7-8, 1213-1223 p.Article in journal (Refereed) Published
Abstract [en]

Sputter deposited aluminum nitride (AlN) thin films have played a central role for the successful development of the thin film electro-acoustic technology. The development has been primarily driven by one device-the thin film bulk acoustic resonator, with its primary use for high frequency filter applications for the telecom industry. Recently, increased piezoelectric properties in AlN through the alloying with scandium nitride have been identified both experimentally and theoretically. This opens up new possibilities for the thin film electro-acoustic technology. Here expectations and discussions are presented on acoustic FBAR sensor performance when based on AlN as well as on such AlN alloys to identify possible benefits and limitations. Inhere, the distinction is made between direct and in-direct (acoustic) use of the piezoelectric effect for sensor applications. These two approaches are described and compared in view of their advantages and possibilities. Especially, the indirect (or acoustic) use is identified as interesting for its versatility and good exploitation of the thin film technology to obtain highly sensitive sensor transducers. It is pointed out that the indirect approach can well be obtained internally in the piezoelectric material structure. Original calculations are presented to support the discussion.

Place, publisher, year, edition, pages
Springer Verlag (Germany) , 2012. Vol. 18, no 7-8, 1213-1223 p.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-79664DOI: 10.1007/s00542-012-1527-8ISI: 000305691500042OAI: oai:DiVA.org:liu-79664DiVA: diva2:544298
Available from: 2012-08-14 Created: 2012-08-13 Last updated: 2017-12-07

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Wingqvist, Gunilla

Search in DiVA

By author/editor
Wingqvist, Gunilla
By organisation
Department of Physics, Chemistry and BiologyThe Institute of Technology
In the same journal
Microsystem Technologies: Micro- and Nanosystems Information Storage and Processing Systems
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 75 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf