liu.seSearch for publications in DiVA
Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
Islamia University of Bahawalpur, Pakistan .
Islamia University of Bahawalpur, Pakistan .
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
Show others and affiliations
2012 (English)Conference paper, Published paper (Refereed)
Abstract [en]

In this study deep level transient spectroscopy has been performed on boron-nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N-A-N-D)similar to 3 x 10(17) cm(-3). We observed a hole H-1 majority carrier and an electron E-1 minority carrier traps in the device having activation energies E-nu + 0.24 eV, E-c -0.41 eV, respectively. The capture cross-section and trap concentration of H-1 and E-1 levels were found to be (5 x 10(-19) cm(2), 2 x 10(15) cm(-3)) and (1.6 x 10(-16) cm(2), 3 x 10(15) cm(-3)), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H-1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E-1 defect to a nitrogen donor.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 15, 3041-3043 p.
Keyword [en]
SiC; DLTS; Acceptors; Donors; Doping; Deep level defects; LED
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-79662DOI: 10.1016/j.physb.2011.08.085ISI: 000305790800057OAI: oai:DiVA.org:liu-79662DiVA: diva2:544300
Conference
26th International Conference on Defects in Semiconductors
Available from: 2012-08-14 Created: 2012-08-13 Last updated: 2012-10-21

Open Access in DiVA

No full text

Other links

Publisher's full text

Authority records BETA

Faraz, SadiaJokubavicius, ValdasWahab, QamarSyväjärvi, Mikael

Search in DiVA

By author/editor
Faraz, SadiaJokubavicius, ValdasWahab, QamarSyväjärvi, Mikael
By organisation
Department of Physics, Chemistry and BiologyThe Institute of TechnologyThin Film PhysicsSemiconductor Materials
Engineering and Technology

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 99 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • oxford
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf