Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopy
2012 (English)Conference paper (Refereed)
In this study deep level transient spectroscopy has been performed on boron-nitrogen co-doped 6H-SiC epilayers exhibiting p-type conductivity with free carrier concentration (N-A-N-D)similar to 3 x 10(17) cm(-3). We observed a hole H-1 majority carrier and an electron E-1 minority carrier traps in the device having activation energies E-nu + 0.24 eV, E-c -0.41 eV, respectively. The capture cross-section and trap concentration of H-1 and E-1 levels were found to be (5 x 10(-19) cm(2), 2 x 10(15) cm(-3)) and (1.6 x 10(-16) cm(2), 3 x 10(15) cm(-3)), respectively. Owing to the background involvement of aluminum in growth reactor and comparison of the obtained data with the literature, the H-1 defect was identified as aluminum acceptor. A reasonable justification has been given to correlate the E-1 defect to a nitrogen donor.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 15, 3041-3043 p.
SiC; DLTS; Acceptors; Donors; Doping; Deep level defects; LED
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-79662DOI: 10.1016/j.physb.2011.08.085ISI: 000305790800057OAI: oai:DiVA.org:liu-79662DiVA: diva2:544300
26th International Conference on Defects in Semiconductors