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Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
Islamia University of Bahawalpur, Pakistan .
Islamia University of Bahawalpur, Pakistan .
Linköping University, Department of Physics, Chemistry and Biology. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.
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2012 (English)Conference paper, Published paper (Refereed)
Abstract [en]

Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N-D-N-A) similar to 2.0 x 10(12) cm(-3), 2 x 10(16) cm(-3) and 9 x 10(15) cm(3), respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E-c - 0.39 eV, E-c - 0.67 eV and E-c - 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen-boron complex. A comparison with the published data revealed A, B and C to be E-1/E-2, Z(1)/Z(2) and R levels, respectively.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 15, 3038-3040 p.
Keyword [en]
n-Type 6H-SiC; Sublimation growth process; DLTS; Deep level defects; Surface defect; Co-doping
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-79661DOI: 10.1016/j.physb.2011.08.036ISI: 000305790800056OAI: oai:DiVA.org:liu-79661DiVA: diva2:544301
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Available from: 2012-08-14 Created: 2012-08-13 Last updated: 2012-10-21

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Faraz, Sadia MunichaJokubavicius, ValdasWahab, QamarSyväjärvi, Mikael

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Faraz, Sadia MunichaJokubavicius, ValdasWahab, QamarSyväjärvi, Mikael
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Department of Physics, Chemistry and BiologyThe Institute of TechnologyThin Film PhysicsSemiconductor Materials
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  • apa
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