Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation method
2012 (English)Conference paper (Refereed)
Deep level transient spectroscopy (DLTS) is employed to study deep level defects in n-6H-SiC (silicon carbide) epilayers grown by the sublimation method. To study the deep level defects in n-6H-SiC, we used as-grown, nitrogen doped and nitrogen-boron co-doped samples represented as ELS-1, ELS-11 and ELS-131 having net (N-D-N-A) similar to 2.0 x 10(12) cm(-3), 2 x 10(16) cm(-3) and 9 x 10(15) cm(3), respectively. The DLTS measurements performed on ELS-1 and ELS-11 samples revealed three electron trap defects (A, B and C) having activation energies E-c - 0.39 eV, E-c - 0.67 eV and E-c - 0.91 eV, respectively. While DLTS spectra due to sample ELS-131 displayed only A level. This observation indicates that levels B and C in ELS-131 are compensated by boron and/or nitrogen-boron complex. A comparison with the published data revealed A, B and C to be E-1/E-2, Z(1)/Z(2) and R levels, respectively.
Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 407, no 15, 3038-3040 p.
n-Type 6H-SiC; Sublimation growth process; DLTS; Deep level defects; Surface defect; Co-doping
Engineering and Technology
IdentifiersURN: urn:nbn:se:liu:diva-79661DOI: 10.1016/j.physb.2011.08.036ISI: 000305790800056OAI: oai:DiVA.org:liu-79661DiVA: diva2:544301