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Surface morphology effects on the light-controlled wettability of ZnO nanostructures
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Sensor Science and Molecular Physics. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Semiconductor Materials. Linköping University, The Institute of Technology.
Linköping University, Department of Physics, Chemistry and Biology, Thin Film Physics. Linköping University, The Institute of Technology.ORCID iD: 0000-0002-2837-3656
2012 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 258, no 20, 8146-8152 p.Article in journal (Refereed) Published
Abstract [en]

ZnO nanostructures of diverse morphology with shapes of corrals and cabbages as well as open and filled hexagons and sheaves prepared by APMOCVD technique, are investigated with water contact angle (CA) analysis. The as-grown ZnO nanostructures exhibit pure hydrophobic behavior, which is enhanced with the increase of the nanostructures surface area. The most hydrophobic structures (CA = 124 degrees) were found to be the complex nanosheaf, containing both the macro-and nanoscale features. It is concluded that the nanoscale roughness contributes significantly to the hydrophobicity increase. The character of wettability was possible to switch from hydrophobic-to-superhydrophilic state upon ultra violet irradiation. Both the rate and amplitude of the contact angle depend on the characteristic size of nanostructure. The observed effect is explained due to the semiconductor properties of zinc oxide enhanced by increased surface chemistry effect in nanostructures.

Place, publisher, year, edition, pages
Elsevier , 2012. Vol. 258, no 20, 8146-8152 p.
Keyword [en]
ZnO nanostructures; UV irradiation; Wettability; Hydrophilicity; Hydrophobicity
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:liu:diva-79656DOI: 10.1016/j.apsusc.2012.05.011ISI: 000305940700057OAI: oai:DiVA.org:liu-79656DiVA: diva2:544307
Available from: 2012-08-14 Created: 2012-08-13 Last updated: 2017-12-07

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Khranovskyy, VolodymyrEkblad, TobiasYakimova, RositsaHultman, Lars

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