Liquid-target Reactive Magnetron Sputter Epitaxy of High Quality GaN(0001ɸ)ɸ Nanorods on Si(111)
2015 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 39, 702-710 p.Article in journal (Refereed) Published
Direct current magnetron sputter epitaxy with a liquid Ga sputtering target hasbeen used to grow single-crystal GaN(0001) nanorods directly on Si(111)substrates at different working pressures ranging from 5 to 20 mTorr of pure N2,.The as-grown GaN nanorods exhibit very good crystal quality from bottom to topwithout stacking faults, as determined by transmission electron microscopy. Thecrystal quality is found to increase with increasing working pressure. X-raydiffraction results show that all the rods are highly (0001)-oriented. Thenanorods exhibit an N-polarity, as determined by convergent beam electrondiffraction methods. Sharp and well-resolved 4 K photoluminescence peaks at ~3.474 eV with a FWHM ranging from 1.7 meV to 35 meV are attributed to theintrinsic GaN band edge emission and corroborate the superior structuralproperties of the material. Texture measurements reveal that the rods haverandom in-plane orientation when grown on Si(111) with native oxide, while theyhave an in-plane epitaxial relationship of GaN // Si when grown onsubstrates without surface oxide.
Place, publisher, year, edition, pages
Elsevier, 2015. Vol. 39, 702-710 p.
GaN, Nanorods, X-ray Diffraction, TEM, PL, magnetron sputter epitaxy, sputtering
IdentifiersURN: urn:nbn:se:liu:diva-84653DOI: 10.1016/j.mssp.2015.05.055ISI: 000361774100097OAI: oai:DiVA.org:liu-84653DiVA: diva2:560991
Funding: Swedish Foundation for Strategic Research; Swedish Research Council Linnaeus [2008-6572]; Swedish Government Strategic Research Area Grant in Materials Science AFM-SFO MatLiU [2009-00971]; Knut and Alice Wallenberg Foundation2012-10-162012-10-162016-08-31Bibliographically approved