Room-Temperature Electron Spin Amplifier Base on Ga(In)NAs Alloys
2013 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 25, no 5, 738-742 p.Article in journal (Refereed) Published
The first experimental demonstration of a spin amplifier at room temperature is presented. An efficient, defect-enabled spin amplifier based on a non-magnetic semiconductor, Ga(In)NAs, is proposed and demonstrated, with a large spin gain (up to 2700% at zero field) for conduction electrons and a high cut-off frequency up to 1 GHz.
Place, publisher, year, edition, pages
2013. Vol. 25, no 5, 738-742 p.
spin amplifiers; spintronics; room temperature; defects; semiconductors
National CategoryCondensed Matter Physics
IdentifiersURN: urn:nbn:se:liu:diva-85468DOI: 10.1002/adma.201202597ISI: 000314600900008OAI: oai:DiVA.org:liu-85468DiVA: diva2:570638